A B C
Z. Naturforsch. 67a, 50 – 56 (2012)
doi:10.5560/ZNA.2011-0052
Magnetoresistance of Planar Heterostructures Approached on a Theoretical Basis
Stanisław Olszewski and Tomasz Roliński
Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
Received July 11, 2011 / revised September 14, 2011
Reprint requests to: S. O.; E-mail: olsz@ichf.edu.pl
The change of magnetoresistance in dependence on the strength of the magnetic induction is examined theoretically for several heterostructures taken as examples. Different temperatures of the examined samples, concentrations of the electron or hole carriers, and band structure properties are then involved. A general result is that a linear increase of magnetoresistance as a function of the magnetic induction should be obtained for all samples. This finds its counterpart in the behaviour of the experimental data. The ratios of the theoretical slopes of increase to the experimental ones range between 0.1 and 11, but the average ratio amounts to less than 1.8.
Key words: Two-Dimensional Interface Heterostructures; Diagonal and Hall Magnetoresistance.
PACS numbers: 72.20 My; 73.40 Kp; 73.40 Lq; 73.50 Jt
Full-text PDF